MALVERN, PA — Vishay Intertechnology Inc. (NYSE: VSH) has introduced two new 1200-volt silicon carbide MOSFET power modules designed to boost efficiency, reliability, and design flexibility across a wide range of automotive, industrial, energy, and telecom applications. The VS-MPY038P120 and VS-MPX075P120 expand the company’s portfolio with low-profile solutions built on its latest SiC technology and rugged transfer-mold construction.
The modules, offered with four or six MOSFETs depending on configuration, integrate fast intrinsic SiC diodes and an onboard NTC thermistor for real-time temperature monitoring. Vishay said the combination reduces switching losses and improves thermal behavior—key performance factors for systems such as solar inverters, EV and hybrid vehicle chargers, motor drives, welding equipment, HVAC systems, UPS units, DC/DC converters, and large-scale battery storage.
Vishay highlights transfer-mold construction as a core advantage, noting that it delivers longer lifecycle performance and better thermal resistance than legacy module designs. The low-profile MAACPAK PressFit package is built to minimize parasitic inductance and EMI, while its matrix pin layout aligns with industry-standard footprints, allowing customers to replace competing modules without redesigning hardware.
The VS-MPY038P120 uses a full-bridge inverter topology and features 38 mΩ on-resistance with a continuous drain current of 35 A at +80 °C. The VS-MPX075P120 supports a three-phase inverter topology with 75 mΩ on-resistance and an 18 A continuous drain current. Both models are rated for high-speed switching with low capacitance and support maximum junction temperatures up to +175 °C. They are also RoHS-compliant and halogen-free.
With growing demand for efficient power conversion in electrified transportation, renewable energy systems, and high-density industrial electronics, the new SiC modules position Vishay to compete more aggressively in next-generation power architectures.
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