Vishay Unveils Game-Changing Power MOSFET for Tech Applications

Vishay Intertechnology

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has unveiled a potent new 30 V n-channel TrenchFET® Gen V power MOSFET that promises to boost power density and improve thermal performance across a range of tech applications. These include industrial, computer, consumer, and telecom uses.

The Vishay Siliconix SiSD5300DN, which features advanced source flip technology in the compact 3.3 mm by 3.3 mm PowerPAK® 1212-F package, is set to become a game-changer in the semiconductor industry. It delivers superior on-resistance of 0.71 mΩ at 10 V and an impressive on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in switching applications — of 42 mΩ*nC.

Despite having the same footprint as the PowerPAK 1212-8S, the new device offers an 18% lower on-resistance to increase power density. Its groundbreaking source flip technology reduces thermal resistance from 63 °C/W to 56 °C/W. Furthermore, the SiSD5300DN’s FOM marks a significant 35% improvement over previous-generation devices. This translates into reduced conduction and switching losses, leading to energy savings in power conversion applications.

The PowerPAK 1212-F’s source flip technology reverses the typical proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path. This promotes cooler operation while minimizing the extent of the switching area, reducing the impact of trace noise. In the PowerPAK 1212-F package specifically, the source pad dimension increases tenfold, from 0.36 mm² to 4.13 mm², enabling a corresponding improvement in thermal performance.

Ideal for applications such as secondary rectification, active clamp battery management systems, buck and BLDC converters, OR-ing FETs, motor drives, and load switches, the SiSD5300DN is poised to make a significant impact across various end products. These include welding equipment, power tools, servers, edge devices, supercomputers, tablets, lawnmowers, cleaning robots, and radio base stations.

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The device is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free, ensuring it meets the highest industry standards. Samples and production quantities of the SiSD5300DN are now available with lead times of 26 weeks.

Vishay Intertechnology, Inc., one of the world’s leading manufacturers of discrete semiconductors and passive electronic components, continues to drive innovative designs across various markets, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical sectors.

In summary, Vishay Intertechnology has introduced a powerful new 30 V n-channel TrenchFET Gen V power MOSFET, the SiSD5300DN. With its compact size and advanced source flip technology, this semiconductor device offers improved power density and thermal performance for a variety of applications. It delivers superior on-resistance and an impressive figure of merit, resulting in reduced energy consumption. The SiSD5300DN is suitable for a wide range of products, including welding equipment, power tools, servers, and more. It meets industry standards for reliability and environmental friendliness.

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