MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) this week unveiled its first fourth-generation 600 V E Series power MOSFET, the SiHR080N60E, packed in the innovative PowerPAK® 8 x 8LR package this week. This groundbreaking technology promises to revolutionize telecom, industrial, and computing applications by offering an unprecedented reduction in on-resistance and resistance times gate charge—a pivotal figure of merit (FOM) for MOSFETs in power conversion applications—by 27% and 60%, respectively.
This latest advancement not only challenges the status quo by delivering higher current capacity in a notably smaller footprint compared to its predecessors in the D²PAK package but also sets a new standard for power systems architecture, particularly within the initial stages of power factor correction (PFC) and DC/DC converter blocks. The potential applications for the SiHR080N60E are vast, spanning from servers, edge computing, supercomputers, and data storage solutions to UPS systems, lighting technologies, telecom SMPS, solar inverters, welding equipment, and more.
The SiHR080N60E’s compact PowerPAK 8 x 8LR package, measuring just 10.42 mm by 8 mm by 1.65 mm, not only reduces the footprint by over 50% compared to the D²PAK version but also slashes the height by 66%, thereby significantly enhancing thermal capability through top-side cooling. This thermal efficiency translates into a 46% higher current capacity at the same on-resistance level, facilitating a surge in power density that is poised to redefine industry standards.
Built on Vishay’s state-of-the-art E Series superjunction technology, the device showcases an impressively low typical on-resistance of 0.074 Ω at 10 V and an ultra-low gate charge down to 42 nC, achieving an industry-leading FOM of 3.1 Ω*nC. This translates into reduced conduction and switching losses, thus optimizing energy savings and boosting efficiency in power systems above 2 kW. Additionally, the MOSFET’s design incorporates low effective output capacitances and a Kelvin connection to further refine switching performance in various topologies.
Beyond its technical prowess, the SiHR080N60E is both RoHS-compliant and halogen-free, designed to endure overvoltage transients in avalanche mode with guaranteed limits, ensuring reliability through 100% UIS testing.
The introduction of the SiHR080N60E by Vishay represents a significant leap forward in addressing the growing demand for more efficient and compact power conversion solutions. As industries continue to push for greater performance in smaller packages, Vishay’s latest MOSFET technology emerges as a critical tool in enabling this transition, promising enhanced performance, reliability, and environmental sustainability. This development not only underscores Vishay’s commitment to innovation but also highlights the ongoing evolution of power conversion technologies to meet the complex demands of modern electronic applications.
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